Pseudocode Example of a Process Flow Segment

                   
   START (100) p-type 10 ohm cm wafers         ; start 100 wafers
   CLEAN in H2(S0)4-H202 piranha etch, 2 min   ; clean, rinse, dry
   RINSE 1, 4 min
   RINSE 2, 4 min
   DRY
   OXIDIZE 1 hr at 1000 C in Wet Oxygen        ; oxidize
       place wafers in quartz oxidation boat
       insert into furnace ante-chamber
       push at 1/2" per sec at 800 C in Oxygen
       ramp to 1000 C (10 C/min), 20 min
       turn on steam, 60 min
       ramp down to 800 C in Oxygen
       pull at 1/2" per sec
       unload into plastic carriers